PART |
Description |
Maker |
102100-1 |
.156 Inch Centerline-Cable to Board AMPMODU .031 x .062 Interconnection System (Mod I); MOD I RECP PLTD 15 SEL ( AMP )
|
Tyco Electronics
|
APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp. Kingbright Corporation
|
OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD. Toshiba Semiconductor
|
Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器,红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation Toshiba Semiconductor
|
MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED) GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
TLN208 |
LED LAMP GaAlAs INFRARED EMITTER INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor Toshiba Corporation
|